Subject Code: EC6L017 Name: Semiconductor Device Modeling L-T-P: 3-0-0 Credit: 3
Review of semiconductor physics: Quantum foundation, Carrier scattering, high field effects; P- N junction diode modeling: Static model, Large signal model and SPICE models; BJT modeling: Ebers - Moll, Static, large-signal, small- signal models. Gummel - Poon model. Temperature and area effects. Power BJT model, SPICE models, Limitations of GP model; Advanced Bipolar models: VBIC, HICUM and MEXTARM;MOS Transistors: LEVEL 1, LEVEL 2 ,LEVEL 3, BSIM, HISIMVEKV Models, Threshold voltage modeling, Punchthrough, Carrier velocity modeling, Short channel effects, Channel-length modulation, Barrier lowering, Hot carrier effects, Mobility modeling, Model parameters; Analytical and Numerical modeling of BJT and MOS transistors; Types of models for Heterojunction Bipolar Transistors, Compact modeling concepts, Modeling of HBTs, HBT noise models, Measurement and parameter extraction.

Pre-requisite: None

Text Books:
  1. G. Massobrio, P. Antognetti, Semiconductor Device Modeling with SPICE, 2nd edition, McGraw-Hill, New York,1993.
  2. M Rudolph, Introduction to Modeling HBTs, Artech House, Boston, 2006.
Reference Books:
  1. S M Sze, K K Ng, Physics of Semiconductor Devices, 3rd edition, John Wiley, New Jersey, 2007.
    2. G. A. Armstrong, C.K.Maiti, Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits ,IET Series, London, 2007.
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