Subject Code: EC6L029 Name: Low Power VLSI Circuits & Systems L-T-P: 3-0-0 Credit: 3
Basics of MOS circuits: MOS transistor structure and device modelling; MOS inverters; MOS combinational circuits – Different logic families. Sources of power dissipation in CMOS circuits: Static power dissipation; Diode leakage current, sub-threshold leakage current, gate and other tunnel currents; Dynamic power dissipation; Short circuit power; Switching power; Gliching power, Supply voltage scaling approaches: Technology level, Logic level, Architecture level, Algorithm level, Dynamic voltage scaling, Power Management; Switched Capacitance Minimization Approaches: Hardware Software Trade-off, Bus Encoding, Two’s compliment vs Sign magnitude, Architectural optimization, Clock gating, Logic styles; Leakage power minimization approaches: Variable-threshold voltage CMOS (VTCMOS) approach, Multi-threshold voltage CMOS (MTCMOS) approach, Dual-Vt assignment approach, Transistor stacking; Special Topics: Adiabatic switching circuits, Battery-aware synthesis, Variation tolerant design.

Prerequisite: None  

Text/Reference Books:
  1. Kiat-Seng Yeo and Kaushik Roy, Low-voltage, Low-power VLSI sub-systems, Mc Graw Hill, 2005.
  2. Sung-Mo Kang, Y Leblebici, CMOS Digital Integrated Circuits: Analysis and Design, Tata Mc Graw Hill, 2003.
  3. Neil H. E. Weste and K. Eshraghian, Principles of CMOS VLSI Design, Addison Wesley (Indian reprint).
  4. A. Bellamour and M. I. Elmasri, Low-power VLSI CMOS Circuit Design, Kluwer Academic Press, 1995.
  5. Kaushik Roy and Sharat C. Prasad, Low-power CMOS VLSI Design, Wiley-Interscience, 2000.